1 - 4 ? 2006 ixys all rights reserved 0644 ixer 35n120d1 features ? npt 3 igbt - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ? hiperfred tm diode - fast reverse recovery - low operating forward voltage - low leakage current ? isoplus 247 tm package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline applications ? single switches ? choppers with complementary free wheeling diodes ? phaselegs, h bridges, three phase bridges e.g. for - power supplies, ups - ac, dc and sr drives - induction heating igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 50 a i c90 t c = 90c 32 a i cm v ge = 15 v; r g = 39 ; t vj = 125c 50 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = 900v; v ge = 15 v; r g = 39 ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 200 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 35 a; v ge = 15 v; t vj = 25c 2.2 2.8 v t vj = 125c 2.6 v v ge(th) i c = 1 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.4 ma t vj = 125c 0.4 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 85 ns t r 50 ns t d(off) 440 ns t f 50 ns e on 5.4 mj e off 2.6 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 2 nf q gon v ce = 600 v; v ge = 15 v; i c = 35 a 150 nc r thjc 0.6 k/w r thch with heatsink compound 0.3 k/w inductive load, t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 39 i c25 =50a v ces =1200v v ce(sat) typ. = 2.2v npt 3 igbt with diode in isoplus247 tm g c e g c e g = gate c = collector e = emitter isolated backside isoplus 247 tm e153432 p h a s e - o u t
2 - 4 ? 2006 ixys all rights reserved 0644 ixer 35n120d1 component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted 30 pf pins and mounting tab in the case weight 6g diode symbol conditions maximum ratings i f25 t c = 25c 48 a i f90 t c = 90c 25 a symbol conditions characteristic values min. typ. max. v f i f = 35 a; t vj = 25c 2.5 2.9 v t vj = 125c 1.9 v i rm 51 a t rr 80 ns e rec(off) 1.8 mj r thjc 1.2 k/w r thch with heatsink compound 0.6 k/w i f = 30 a; di f /dt = -1100 a/s; t vj = 125c v r = 600 v; v ge = 0 v equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 0.95 v; r 0 = 45 m diode (typ. at t j = 125c) v 0 = 1.26v; r 0 = 15 m thermal response igbt c th1 = 0.067 j/k; r th1 = 0.108 k/w c th2 = 0.175 j/k; r th2 = 0.491 k/w diode c th1 = 0.039 j/k; r th1 = 0.311 k/w c th2 = 0.090 j/k; r th2 = 0.889 k/w isoplus247 tm outline the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side this drawing will meet all dimensions requirement of jedec outline to-247 ad except screw hole and except lmax. p h a s e - o u t
3 - 4 ? 2006 ixys all rights reserved 0644 ixer 35n120d1 01234567 0 20 40 60 80 100 120 0 40 80 120 160 200 0 5 10 15 20 01234567 0 20 40 60 80 100 120 v ce v i c v ce a i c v nc q g v v ge 9 v 11 v 9 v 11 v a 4 6 8 10121416 0 20 40 60 80 100 120 v v ge a i c 01234 0 15 30 45 60 75 90 v v f i f a 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 single pulse t s k/w z thjc igbt mubw3512e7 13 v 15 v t vj = 25c v ge = 17 v 15 v 13 v t vj = 125c v ge = 17 v t vj = 25c t vj = 125c v ce = 20 v t vj = 125c t vj = 25c v ce = 600 v i c = 35 a diode fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. transient thermal impedance p h a s e - o u t
4 - 4 ? 2006 ixys all rights reserved 0644 ixer 35n120d1 fig. 9 typ. turn on energy and switching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 typ. turn off characteristics fig. 12 typ. turn off characteristics of free wheeling diode of free wheeling diode fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current 0 20406080 0 4 8 12 16 20 0 10 20 30 40 50 60 70 80 90 100 0 20406080 0 2 4 6 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 0 1 2 3 4 0 200 400 600 800 10 20 30 40 50 60 70 80 0 2 4 6 8 0 40 80 120 160 e off t d(off) t f e off t d(off) t f i c a i c a e off e on t t r g r g mj e on mj e off ns t ns t mj ns mj e rec(off) v ce = 600 v v ge = 15 v i c = 35 a t vj = 125c ns e on t r t d(on) e on t r t d(on) v ce = 600 v v ge = 15 v r g = 39 t vj = 125c v ce = 600 v v ge = 15 v i c = 35 a t vj = 125c v ce = 600 v v ge = 15 v r g = 39 t vj = 125c e rec(off) 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 1200 1400 1600 1800 -di f /dt [a/s] i rm [a] 0 50 100 150 200 250 300 350 t rr [ns] r g = i rm t rr 39 56 56 75 75 v ce =600v v ge =+-15v t j =125c i f =35a 39 24 24 15 15 0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 1400 1600 1800 -di f /dt [a/s] q rr [c] i f = r g = 75 56 39 24 15 7,5a 70a 50a 35a 15a t vj = 125c i f = 30 a v r = 600 v t vj = 125c v r = 600 v p h a s e - o u t
|
